Research Fellow (Quantum Engineering)

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Job Description

We are seeking a highly motivated Research Fellow to join our growing team developing next-generation electrical interfaces to diamond quantum sensors based on nitrogen-vacancy (NV) centers. The successful candidate will lead efforts to develop novel electrical readout, control, and sensing architectures that complement or potentially replace conventional optical detection methods.

The research will combine semiconductor device physics, quantum sensing, spin-dependent transport, and diamond electronics, with opportunities to explore hybrid platforms involving two-dimensional materials, field-effect devices, and advanced electrical detection techniques.

Key Responsibilities

• Electrical interfaces for diamond quantum systems: Lead efforts to develop and optimize electrical approaches for detecting and controlling NV-center spin and charge states, including device design, fabrication, and characterization.
• Semiconductor device architectures: Explore p-i-n, Schottky, field-effect, and related device structures for integrating diamond defects with electrical readout and control platforms.
• Spin-dependent transport and recombination: Investigate spin-dependent electrical, optical, and recombination processes in diamond and related defect systems for quantum sensing applications.
• Diamond–hybrid devices: Develop hybrid device architectures incorporating diamond with novel and/or CMOS-compatible materials, including graphene, silicon nitride, or other functional layers for electrical transduction.
• Device modelling and simulation: Model carrier transport, charge-state dynamics, photoelectric processes, recombination pathways, and electrostatic device behaviour to guide experiments and optimize device performance.
• Team collaboration and mentorship: Work closely with PhD students, research engineers, and undergraduate researchers while contributing to the growth of a multidisciplinary research programme.
• Cross-disciplinary exploration: Engage with applications spanning quantum sensing, integrated electronics, semiconductor diagnostics, quantum materials, and bioelectronic sensing.

What We Offer
• Opportunity to pioneer new approaches to electrical quantum sensing and spin-based technologies in diamond.
• Access to state-of-the-art facilities for diamond characterization, device fabrication, optics, microwave engineering, and electrical measurements.
• Freedom to pursue ambitious and innovative research directions at the intersection of quantum technology, semiconductor electronics, and advanced sensing.
• Participation in building a new research programme from the ground up, with significant opportunities for intellectual leadership, technology development, and independent project ownership.
• Strong emphasis on translation beyond academic publications, including the development of enabling technologies, prototype systems, intellectual property, and real-world sensing applications.
• Opportunities to contribute to patent generation, technology commercialization, industry partnerships, and potential future spin-out ventures arising from the research.
• Exposure to a broad range of application areas, including semiconductor diagnostics, advanced manufacturing, quantum instrumentation, materials characterization, healthcare technologies, and next-generation sensing systems.
• Collaboration with experts across quantum sensing, nanofabrication, semiconductor devices, materials science, photonics, and engineering.
• Strong support for publishing impactful research while simultaneously pursuing technologies that can deliver tangible scientific, industrial, and societal benefits.

Job Requirements

Job Requirements
• PhD in Physics, Electrical Engineering, Materials Science, Applied Physics, or a closely related field.
• Strong background in one or more of the following:
o Semiconductor device physics
o Quantum sensing or spin physics
o Diamond defects and color centers
o Electronic transport measurements
o Semiconductor characterization techniques
• Experience with electrical device fabrication and characterization, including Schottky diodes, p-i-n structures, FETs, or related semiconductor devices.
• Familiarity with low-noise electrical measurements, RF electronics, lock-in techniques, impedance spectroscopy, capacitance measurements, or microwave spin-resonance methods.
• Experience with carrier transport simulations, semiconductor modelling, finite-element analysis, or device design tools is advantageous.
• Knowledge of NV centers, spin-dependent recombination, charge-state physics, PDMR, ODMR, or related quantum defect systems is desirable but not strictly required.
• Experience with graphene, hBN, other two-dimensional materials, or hybrid quantum-semiconductor devices would be highly advantageous.
• Strong publication record, scientific communication skills, and ability to work independently while contributing effectively within a collaborative team.
• Open to Fixed Term Contract.